N TYPE GE CAN BE FUN FOR ANYONE

≤ 0.fifteen) is epitaxially developed over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and after that the framework is cycled by means of oxidizing and annealing levels. A result of the preferential oxidation of Si in excess of Ge [68], the original Si1–The percentage of the globe reserves situated in the state with